Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359045
Title: Defect studies of GaAs and Al GaAs grown by chemical beam epitaxy.
Author: Jamal, Zul Azhar bin Zahid.
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1993
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.359045  DOI: Not available
Keywords: Semiconductors Solid state physics
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