Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358009
Title: Plasma-assisted deposition using an unbalanced magnetron
Author: Ja'fer, Hussein Abidjwad
ISNI:       0000 0001 3587 7281
Awarding Body: Loughborough University of Technology
Current Institution: Loughborough University
Date of Award: 1993
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Abstract:
It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production.
Supervisor: Not available Sponsor: Ministry of Higher Education and Scientific Research, Iraq
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.358009  DOI: Not available
Keywords: Magnetron sputtering
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