Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343950
Title: Electrical properties of Si/Si←1←-←xGe←x/Si inverted modulation doped structures.
Author: Sadeghzadeh, Mohammad Ali.
ISNI:       0000 0001 3544 5155
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 1998
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.343950  DOI: Not available
Keywords: MOLECULAR BEAM EPITAXY; INTERFACES; SILICON; GERMANIUM SILICIDES; LAYERS; HALL EFFECT; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; ELECTRIC CONDUCTIVITY; SHUBNIKOV-DE HAAS EFFECT Chemistry, Physical and theoretical Solid state physics
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