Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342122
Title: Two-dimensional dopant profiling for shallow junctions by TEM and AFM.
Author: Yoo, Kyung-Dong.
ISNI:       0000 0001 3575 4142
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 2000
Availability of Full Text:
Full text unavailable from EThOS. Please contact the current institution's library directly if you wish to view the thesis.
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.342122  DOI: Not available
Keywords: TRANSMISSION ELECTRON MICROSCOPY; ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; ETCHING; SURFACES; DOPED MATERIALS; CRYSTAL DOPING; SPATIAL DISTRIBUTION Electric apparatus and appliances Electronic apparatus and appliances Solid state physics
Share: