Use this URL to cite or link to this record in EThOS:
Title: A study of the electrical properties of point and extended defects in silicon.
Author: Amaku, Afi.
ISNI:       0000 0001 3419 1771
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 1997
Availability of Full Text:
Full text unavailable from EThOS. Please contact the current institution's library directly if you wish to view the thesis.
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Carrier recombination; EBIC; DLTS; Ion-induced Solid state physics