Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332086
Title: Study of ion implantation damage in silicon wafers using phonons.
Author: Strickland, Keith R.
Awarding Body: University of Lancaster
Current Institution: Lancaster University
Date of Award: 1992
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.332086  DOI: Not available
Keywords: Defect in semiconductors Solid state physics
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