Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329673
Title: Charge conduction through silicon dioxide during ion implantation.
Author: Broughton, Carl.
ISNI:       0000 0001 3482 6247
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1989
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.329673  DOI: Not available
Keywords: Integrated circuits Electric apparatus and appliances Electronic apparatus and appliances Solid state physics
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