Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325364
Title: Morphological changes during the growth and etching of 111-V semiconductors.
Author: Steans, Pippa Helen.
ISNI:       0000 0001 3478 6265
Awarding Body: Imperial College London (University of London)
Current Institution: Imperial College London
Date of Award: 1999
Availability of Full Text:
Full text unavailable from EThOS. Please contact the current institution's library directly if you wish to view the thesis.
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.325364  DOI: Not available
Keywords: Solid-state physics Solid state physics Electric apparatus and appliances Electronic apparatus and appliances
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