Use this URL to cite or link to this record in EThOS:
Title: Atomic level diffusion mechanisms in silicon.
Author: De Souza, Maria Merlyne.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 1993
Availability of Full Text:
Full text unavailable from EThOS. Please contact the current institution's library directly if you wish to view the thesis.
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Point defects; Self-diffusion; Dopant; Boron Solid state physics