Use this URL to cite or link to this record in EThOS:
Title: A study of strained SiGe layers using metal oxide semiconductor capacitors and heterostructure bipolar transistors.
Author: Goh, Inn Swee.
ISNI:       0000 0001 3501 6393
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1994
Availability of Full Text:
Access through EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Epitaxial growth; Silicon-germanium Solid state physics Electric circuits Electronic circuits