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Title: A study of strained SiGe layers using metal oxide semiconductor capacitors and heterostructure bipolar transistors.
Author: Goh, Inn Swee.
ISNI:       0000 0001 3501 6393
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1994
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Epitaxial growth; Silicon-germanium