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Title: Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates.
Author: MacPherson, Glyn.
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1995
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Crystal growth; Semiconductors; Epitaxial layers Solid state physics