Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316323
Title: The molecular beam epitaxial growth and characterization of gallium arsenide on silicon.
Author: Woolf, David Andrew.
Awarding Body: University of Wales.Cardiff
Current Institution: Cardiff University
Date of Award: 1990
Availability of Full Text:
Access through EThOS:
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.316323  DOI: Not available
Keywords: Solid-state physics Solid state physics
Share: