Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312440
Title: An ab initio study of deep-level defects in silicon.
Author: Ferreira-Resende, Antonio Luis Santos.
ISNI:       0000 0001 3463 0092
Awarding Body: University of Exeter
Current Institution: University of Exeter
Date of Award: 2000
Availability of Full Text:
Access through EThOS:
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.312440  DOI: Not available
Keywords: SILICON; CRYSTAL LATTICES; CRYSTAL DEFECTS; MATHEMATICAL MODELS; HYDROGEN Physics Solid state physics
Share: