Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311910
Title: The control of metal-nInGaAs and nInAlAs interfaces by cryogenic processing.
Author: Cammack, Darren S.
ISNI:       0000 0001 3515 290X
Awarding Body: Sheffield Hallam University
Current Institution: Sheffield Hallam University
Date of Award: 1999
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.311910  DOI: Not available
Keywords: INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; ALUMINIUM ARSENIDES; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; INTERFACES; MS SOLAR CELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K Electric apparatus and appliances Electronic apparatus and appliances Chemistry, Inorganic Atoms Molecules
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