Use this URL to cite or link to this record in EThOS:
Title: The study of surface damage of gallium arsenide induced by reactive ion etching.
Author: Puttock, Mark Stephen.
ISNI:       0000 0001 3503 1294
Awarding Body: University of Wales.Cardiff
Current Institution: Cardiff University
Date of Award: 1990
Availability of Full Text:
Access through EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors Solid state physics