Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305415
Title: A quantitative EBIC study of dislocations and their interaction with impurities in silicon.
Author: Fell, Timothy S.
ISNI:       0000 0001 3459 0473
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 1992
Availability of Full Text:
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.305415  DOI: Not available
Keywords: Defects in semiconductors Solid state physics
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