Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301095
Title: The effects of band structure on recombination processes in narrow gap materials and laser diodes.
Author: Kotitschke, Ralf Thomas.
ISNI:       0000 0001 3602 0466
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1999
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.301095  DOI: Not available
Keywords: BAND THEORY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; RECOMBINATION; QUANTUM MECHANICS Optics Solid state physics
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