Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300412
Title: Kinetic studies of GaAs growth and doping by molecular beam epitaxy.
Author: Tok, Eng Soon.
Awarding Body: Imperial College London (University of London)
Current Institution: Imperial College London
Date of Award: 1998
Availability of Full Text:
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.300412  DOI: Not available
Keywords: GALLIUM ARSENIDES; DOPED MATERIALS; MOLECULAR BEAM EPITAXY; KINETICS; GROWTH Solid state physics Chemistry, Physical and theoretical
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