Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293830
Title: Range, damage and annealing investigations for boron implanted at low energy into silicon.
Author: Valizadeh, Reza.
Awarding Body: University of Salford
Current Institution: University of Salford
Date of Award: 1990
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.293830  DOI: Not available
Keywords: Semiconductor technology Solid state physics Electric circuits Electronic circuits
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