Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.284725
Title: A Ka-Band GaAs MESFET monolithic downconverter
Author: Elgaid, Khaled Ibrahim
ISNI:       0000 0001 2442 2521
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1998
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Abstract:
The objective of the work of this thesis is to design, fabricate, and characterise a GaAs MESFET based monolithic microwave integrated circuit (MMIC) downconverter which operates at Ka-band frequency (35GHz). In the course of the project active and passive elements required for the MMIC were designed, fabricated, characterised and their equivalent circuit models extracted. Fabrication processes for passives, actives and MMIC were realised using mainly electron beam lithography (EBL) techniques. The main findings of this thesis were: Devices - Influence of gate recess offset on MESFETs The MESFETs were patterned by EBL and gate recessing was accomplished by selective dry etching. The influence of the gate recess offset on the small signal AC equivalent circuit, DC device characteristics, overall high frequency device performance, and low frequency noise behaviour of 0.2 m gate length GaAs MESFETs implemented in the low noise amplifier (LNA) circuit design in this thesis was investigated. Numerical simulations of the AC small signal equivalent circuit dependence were carried out in order to help understand the effects observed. Good qualitative agreement between measured and simulated response was obtained. - Schottky diodes The performance of Schottky-contact diodes used in the MMIC mixer were studied as a function of their geometry and processing conditions. Passives - CPW losses Losses in coplanar interconnect topologies (coplanar waveguide and slotline) using different metallisation processes were investigated. - CPW to slotline transitions A range of coplanar waveguide to slotline transitions required for the MMIC mixer were studied. Broadband performance with insertion loss of < 0.5dB per transition was observed. Transmission line models of the structures have been implemented to enable circuit performance to be predicted and designed to suit the application frequency. The effect of parasitic modes on transitions performance was also investigated.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.284725  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering Electric circuits Electronic circuits
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