Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.280533
Title: Modification of Schottky barriers on GaAs and other III-V semiconductors using a-Si:H interfacial layers.
Author: Sambell, Alistair John.
Awarding Body: University of York
Current Institution: University of York
Date of Award: 1991
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.280533  DOI: Not available
Keywords: Semiconductor diode behaviour Solid state physics Electric apparatus and appliances Electronic apparatus and appliances Optoelectronics
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