Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263129
Title: Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications.
Author: Hossin, Mohamad Abdalla.
ISNI:       0000 0001 3582 1499
Awarding Body: University of Newcastle upon Tyne
Current Institution: University of Newcastle upon Tyne
Date of Award: 1998
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.263129  DOI: Not available
Keywords: Semiconductors; MESFETs; Gate leakage current Electric power transmission Electric circuits Electronic circuits Solid state physics
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