Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243492
Title: The structure and chemistry of InSb(001) and InP(001) : clean surface structure, halogen adsorption and layered halide growth by rotational epitaxy.
Author: Davis, Anthony Alan.
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1997
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.243492  DOI: Not available
Keywords: Semiconductors; Cadmium; Lead iodide Chemistry, Physical and theoretical Solid state physics
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