Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242232
Title: Raman spectroscopy of GaN epilayers and InGaAlAs quaternary semiconductor alloys.
Author: Bulbul, Mahir Mehmet.
ISNI:       0000 0001 3508 4417
Awarding Body: University of Essex
Current Institution: The University of Essex pre-October 2008
Date of Award: 1998
Availability of Full Text:
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.242232  DOI: Not available
Keywords: Lattice vibrations; Phonon properties
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