Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238181
Title: Theoretical studies of GaP:V and GaP:Ni.
Author: Al-Ahmadi, Mohammed Saeed.
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1990
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.238181  DOI: Not available
Keywords: Semiconductor technology
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